1 composite transistors XN6111 silicon pnp epitaxial planer transistor for switching/digital circuits n features l two elements incorporated into one package. (transistors with built-in resistor) l reduction of the mounting area and assembly cost by one half. n basic part number of element l un1111 2 elements n absolute maximum ratings (ta=25?c) unit: mm marking symbol: 6z internal connection parameter symbol ratings unit collector to base voltage v cbo C50 v collector to emitter voltage v ceo C50 v collector current i c C100 ma total power dissipation p t 300 mw junction temperature t j 150 ?c storage temperature t stg C55 to +150 ?c rating of element overall n electrical characteristics (ta=25?c) parameter symbol conditions min typ max unit collector to base voltage v cbo i c = C10 m a, i e = 0 C50 v collector to emitter voltage v ceo i c = C2ma, i b = 0 C50 v collector cutoff current i cbo v cb = C50v, i e = 0 C 0.1 m a i ceo v ce = C50v, i b = 0 C 0.5 m a emitter cutoff current i ebo v eb = C6v, i c = 0 C 0.5 ma forward current transfer ratio h fe v ce = C10v, i c = C5ma 35 forward current transfer h fe ratio h fe (small/large) *1 v ce = C10v, i c = C5ma 0.5 0.99 collector to emitter saturation voltage v ce(sat) i c = C10ma, i b = C 0.3ma C 0.25 v output voltage high level v oh v cc = C5v, v b = C 0.5v, r l = 1k w C4.9 v output voltage low level v ol v cc = C5v, v b = C2.5v, r l = 1k w C 0.2 v transition frequency f t v cb = C10v, i e = 1ma, f = 200mhz 80 mhz input resistance r 1 C30% 10 +30% k w resistance ratio r 1 /r 2 0.8 1.0 1.2 *1 ratio between 2 elements 1 : collector (tr1) 4 : base (tr2) 2 : base (tr1) 5 : emitter (tr2) 3 : collector (tr2) 6 : emitter (tr1) eiaj : scC74 mini type package (6Cpin) 2.8 +0.2 ?.3 1.5 0.65 0.15 0.65 0.15 1 6 5 4 3 2 1.45 0.1 0.95 0.95 1.9 0.1 +0.25 ?.05 0.3 +0.1 ?.05 0.5 +0.1 ?.05 2.9 +0.2 ?.05 1.1 +0.2 ?.1 0.8 0.4 0.2 0 to 0.05 0.16 +0.1 ?.06 0.1 to 0.3 6 tr2 tr1 5 43 2 1
2 composite transistors p t ta i c v ce v ce(sat) i c h fe i c c ob v cb i o v in v in i o XN6111 0 0 ?2 2 ?0 ? ? ? ?0 ?20 ?0 ?60 ?40 ?00 ?0 ?0 collector to emitter voltage v ce ( v ) collector current i c ( ma ) ta=25?c i b =?.0ma 0.9ma 0.8ma 0.7ma 0.6ma 0.5ma 0.4ma 0.3ma 0.2ma 0.1ma 0.01 0.03 0.1 0.3 0.1 0.3 ? ? ?0 ?0 ?00 ? 3 ?0 30 ?00 collector current i c ( ma ) collector to emitter saturation voltage v ce(sat) ( v ) i c /i b =10 ta=75?c 25?c 25?c 0 ? 3 40 80 120 160 ?0 30 ?00 300 ?000 forward current transfer ratio h fe collector current i c ( ma ) v ce = ?0v ta=75?c 25?c ?5?c 0 ?.1 ?.3 6 5 4 3 2 1 ? 3 ?0 30 ?00 collector output capacitance c ob ( pf ) collector to base voltage v cb ( v ) f=1mhz i e =0 ta=25?c ? 3 ?.4 ?0 ?0 ?00 300 ?000 ?000 ?0000 ?.4 ?.2 ?.0 ?.8 ?.6 output current i o ( a ) input voltage v in ( v ) v o =?v ta=25?c 0.01 0.03 ?.1 ?.3 ?.1 ?.3 ? ? ?0 ?0 ?00 ? 3 ?0 30 ?00 input voltage v in ( v ) output current i o ( ma ) v o = 0.2v ta=25?c 0 100 200 300 400 500 0 40 80 120 160 ambient temperature ta ( ?c ) total power dissipation p t ( mw )
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